Abstract

ABSTRACT Gain in heterostructures with CdSe quantum dots (QDs) in ZnMgSSe matrix has been studied theoreticallytaking account of many-body effects. 3D strain distribution in the QD structure has been calculated employing Green's function method for anisotropic crystals of cubic symmetry. An analytical formula in form of the Fourier series has been obtained for the spatial dependence of the strain tensor in periodical array of disk-like planar QDs. The carrier spectrum and wave functions have been calculated taking account of actual 3D potential modifiedby strain effects. It is demonstrated that in wide range of structure parameters the carriers in QD-system areweakly localized. Gain spectrum is shown to be strongly modified by many-body effects. The calculated value ofthe carrier-induced enhancement of the refractive index is in a good agreement with available experimental data. 1. INTRODUCTION During last several years wide-band gap materials attract considerable attention in context of the creation ofvisible light emitting diodes. Simultaneously, success of the growth technology stimulates active investigationsin the field of zero dimensional structures with quantum dots (QD) .

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