Abstract
An analytical model of GaAs metal-semiconductor-field-effect transistor (MESFET) with non uniform doping is developed. The model presents the frequency dependent analytical model of GaAs MESFET under back illumination. Photovoltaic effects across the Schottky junction and active channel are considered to estimate various characteristics under different illumination conditions. The Continuity equations in the gate depletion and neutral regions are solved analytically under various illumination conditions. The frequency dependence of photovoltage at the Schottky contact (Vop) is evaluated. The drain current and channel conductance under A. C. and D. C. conditions are evaluated for various illuminated conditions. It has been observed from the results that when GaAs MESFET is illuminated from back there is more improvement in device characteristics as compared with the device under front illumination. This is due to improved absorption.
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