Abstract
A model for calculation of deformations in a structure consisting of an arbitrary number of thin crystalline layers of Si and Ge on a nonrigid film is constructed. Relative deformations in pseudomorphic layers of Si and Ge are determined as a function of the ratio of thicknesses of contacting semiconductors. The constructed model allows to determine the electron mobility in the strained n-Si on deforming Ge(001) or SiGe(001) Substrate . It is shown that the conduction current is concentrated in the strained channels of silicon transistors made on high-resistance germanium substrates.
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