Abstract
The doping concentration, doping compensation and temperature dependency of electron mobility for GaN, InN, AlN have been calculated using the relaxation time approximation method considering parabolic nature of energy bands. The change in position of Fermi energy with the temperature as well as electron concentrations has been plotted to observe the level of degeneracy for different III-nitride samples. According to the change of Fermi level we have implemented different statistics for mobility extraction modeling at low temperature and low electric field. We compare our simulated results with experimental data and find reasonable correlations, but with evidence that structural imperfection and compensation play crucial roles in our studied samples. Compensation ratio e.g. 0.23 for GaN has been significant in charge neutrality condition. We observe that after 150K the theoretical mobility values deviate from the experimental data. The reasons for the discrepancy are discussed.
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