Abstract
In this study, we examine the effects of void morphology and critical current density (jc) on the electromigration failure distributions of Cu/low-k dual damascene vias. Cu dual damascene vias exhibit multiple modes of electromigration-induced voiding and reliability is strongly dependent on the morphology of voids. We have developed a model of failure for DC and pulsed DC currents that allow prediction of failure time distributions for vias taking into account void morphology. We obtain good agreement between the model predictions and experimental data for all observed void morphologies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
