Abstract
This paper introduces the characterization of the Dual- Metal Junctionless Accumulation-Mode Nanowire FET (DM-JAM-NWFET) at cryogenic temperatures. Mathematical model has been developed by using the 2-D Poisson's equation under the relevant boundary conditions. It is perceived from the study that at cryogenic temperatures, the performance of the considered FET does not differ by a significant amount when compared to that at room temperature. By varying the temperature from 50 K to 300 K, it is noticed that the variation in center potential, electric field, transconductance, output conductance, drain current are almost minimum. The TCAD results were achieved by deploying ATLAS 3-D device simulator and were also contrasted along with the numerical results.
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