Modeling of dual material surrounding split gate junctionless transistor as biosensor

Abstract

In this paper an analytical model of dual material surrounding split gate junctionless transistor for application as a biosensor is introduced. The simulation results show fair compatibility with the analytical models developed for the channel center potential and threshold voltage at channel length of 45 nm and 20 nm. For the detection of the bio-molecules, concept of dielectric modulation has been used. The model shows a satisfactory value of sensitivity in the range of 0–0.27 and 0–0.8 for relative permittivity of biomolecules varying from 1 to 9 at channel length of 45 nm and 20 nm respectively, thus making it an attractive option for use as biosensor. This model has been demonstrated with the aid of TCAD device simulations. • Present work includes modelling of dual material surrounding split gate junction less transistor for bio-sensing application. • The model for channel centre potential and threshold voltage has been developed. • Sensitivity is defined in terms of change in threshold voltage of the device. • Decent sensitivity in the range of 0–0.27 and 0–0.8 for 45 nm and 20 nm technology respectively is observed for relative permittivity varying from 1–9.