Abstract
The physical principles of the hot-carrier related degradation mechanisms in nMOS transistors were examined in Chapter 2. In this chapter, the simulation models developed for estimating the hot-carrier induced oxide degradation will be presented. The physical degradation models include all of the significant mechanisms, i.e., electron and hole trapping, interface trap generation by electron injection and interface trap generation by hole injection. The separate treatment of charge trapping and interface trap generation mechanisms is a novel approach in degradation modeling which is increasingly supported by recent experimental evidence [1],[2]. A new electron injection current model is also presented in this chapter. A dynamic interface trap generation model is derived, and the fundamental differences between static and dynamic stress characteristics are highlighted.
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