Modeling of Defect Formation in Lead Chalcogenides and Their Properties

Abstract

The charge states of intrinsic point defects and the thermodynamic parameters of defect formation processes in undoped lead chalcogenides were determined. The results provide an adequate description of the transport properties of the materials as a function of synthesis temperature and partial pressures of vapor species. Earlier and present experimental data are analyzed in terms of isolated point defects using the complete electroneutrality condition and taking into consideration the high-temperature band structure of the chalcogenides. The concentrations of charge carriers and predominant defects are evaluated for partial pressures corresponding to the stoichiometry ranges of the materials studied.