Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation

Abstract

The authors present simulation results for the subthreshold characteristics of n-channel MOSFETs with 0.1 /spl mu/m gate-length and 0.05 /spl mu/m gate-width obtained with our 3D-DD simulator. We also presented a new method that one can successfully use in a particle-based simulator to properly account for the short-range portions of the e-e and e-i interactions without double-counting the long-range portions of these two interaction terms.