Modeling of deep grooving of silicon in the process of plasmochemical cyclic etching/passivation

Abstract

A new hybrid 2.5-dimensional method of modeling deep grooving of Si in the process of cyclic two-stage etching/passivation in an SF6/C4F8 plasma is presented. The method is based on the Monte Carlo simulation of fluxes of plasma particles and the string-cell model of profile representation. The model of isotropic Si etching in the SF6 plasma, ion-stimulated etching, and polymeric film deposition in the C4F8 plasma is presented. The results of modeling of deep submicron-wide grooves with a high aspect ratio (A > 20) correlate well with the experimental data.