Abstract
Deviation of threshold voltage and effective mobility due to random dopant fluctuation is proposed. An improved 65 nm average drain current MOS model called α law is utilized after fitting HSPICE simulating data and extracting process parameters. Then, a current mismatch model of nanoscale MOSFETs induced by random dopant fluctuation is presented based on propagation of variation theory. In test conditions, the calculated standard deviation applying this model, compared to 100 times Monte-Carlo simulation data with HSPICE, indicates that the average relative error and relative standard deviation is 0.24% and 0.22%, respectively. The results show that this mismatch model is effective to illustrate the physical mechanism, as well as being simple and accurate.
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