Modeling of CMS‐based nonuniform interconnects using FDTD technique

Abstract

SummaryThis paper presents the finite‐difference time‐domain model of nonuniform interconnects including skin effect losses based on the current mode signaling (CMS). For accurate analysis, the nonlinear CMOS inverter is used as a driver for coupled nonuniform interconnects. These effects are incorporated in the proposed model using the modified alpha power law model. Additionally, high‐frequency losses are incorporated in the proposed model that further improves the accuracy. Using the proposed model, the performance of nonuniform interconnects is investigated using the CMS scheme. Time‐domain analysis model is derived from CMS nonuniform interconnects using finite‐difference time‐domain technique. Both inductive and capacitive couplings have been considered to incorporate coupling effects in interconnects. The efficiency of CMS interconnects is evaluated by comparing with conventional voltage mode signaling interconnects. The propagation delays and dynamic and functional cross talk effects at the far end of the coupled nonuniform interconnect are analyzed at the 32‐nm technology node. The proposed model results are validated using the standard HSPICE simulations.