Modeling of charge-trapping non-volatile-memories based on HfO2

Abstract

Graphical abstractDisplay Omitted Highlights? We present experimental and simulation results on the charge-trapping properties of devices based on HfO2. ? A model of the high-k charge trapping device is presented. ? Two trap distributions are considered: uniform throughout the HfO2 and exponential. ? In presence of an exponential trap distribution, the simulation results reproduce well the experimental ones. ? The exponential trap distribution found represents in good approximation an interface trap distribution. In the present work we present experimental results and the first simulation results concerning the charge-trapping properties of devices based on HfO2, MNOS-like, for non-volatile-memory applications. Hafnium oxide sputtered on top of a silicon dioxide tunneling layer represents the storage layer for the charges injected/extracted from the p-type silicon substrate. Although no blocking oxide on top of the structure has been considered in this study, electrical characterization shows large hysteresis at voltages lower than 12V. Insight to the physics underlying the behavior of such a device is given using a simulator presented in this work. The simulation of the programming characteristics will be presented and compared with those obtained from the fabricated devices giving insight to the properties of the traps involved. Good agreement is found between measured and simulated data.