Abstract
Carrier mobility for quantum dot infrared photodetectors is considered as one of the critical parameters to determine many important device’s performance parameters such as the electrical conductivity, drift velocity, dark current and photocurrent. In this paper a complete theoretical model of the carrier mobility for semispherical quantum dot structures is developed. This model is based on the solution of Boltzmann transport equation all over the device. A parametric study of the effects of the QD density and the dimensions of the QD on the carrier mobility is investigated. Finally, the carrier mobility in semispherical QDIP is compared with other QD structures. The presented model is a generic model that can be applied for different semispherical QD structures.
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