Abstract
Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN=2.1±0.1eV and CMN=1.7±0.2eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys.
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