Modeling of an uncooled CMOS THz thermal detector with frequency‐selective cross‐dipole antenna and NMOS temperature sensor

Abstract

AbstractIn this article, we present modeling and simulations of an uncooled thermal THz detector. The detector consists of an on‐chip cross‐dipole antenna, polysilicon resistors, and a temperature sensor. Electromagnetic, thermal, electrical modeling, and simulations of the detector are presented. The three submodels are as follows: THz electromagnetic energy is first selectively absorbed by the antenna realized in the metallization layer. The absorbed wave energy is then converted to Joule heat energy via resistors. Finally, the heat‐generated temperature rise is detected by the temperature sensor. The detectors at three typical THz frequencies of 0.8, 2.9, and 28.3 THz are designed in standard 0.18 μm CMOS technology. Their simulated voltage responsivity is 6.3 V/W at 0.8 THz, 7.2 V/W at 2.9 THz, and 8.2 V/W at 28.3 THz. The noise equivalent power (NEP) is 0.14 μW/√Hz at the three respective frequencies.