Abstract

A physical model is established to demonstrate the mechanism and the kinetic process of a diode transverse-pumped cesium vapor laser. The distribution of pump laser power is described, and the effects of parameters such as the temperature, the cell length and the output coupler reflectivity on the output performance of a cesium vapor laser are simulated and analyzed. The simulation results agree well with the experiment data which shows the validity of this model. A set of optimization parameters is achieved for improving the output characteristics of a diode transverse-pumped Cs vapor laser.

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