Modeling Multigate Negative Capacitance Transistors With Self-Heating Effects

Abstract

A unified model for multigate negative capacitance transistors with self-heating effects (SHEs) is developed. With a metal–ferroelectric–insulator–semiconductor (MFIS) structure, thermal effects result in different temperature rises in the channel and ferroelectric layer. A gate control equation for the double-gate and gate-all-around MFIS structures is developed, on top of which both the current–voltage and charge–voltage characteristics are covered. The formulations describe dependences of ferroelectric layer thickness, with backward compatibility for MOSFETs. A unified thermal network is then proposed for SHE, capturing the essential physics of couplings between ferroelectric temperature and conduction current. The model has been verified with TCAD simulations and implemented for circuit simulations.