Modeling layer-by-layer growth in ion beam assisted deposition of thin films, II: Conditions for stationary step flow on stepped surfaces

Abstract

A model for growth of stepped surfaces is introduced. The model describes the processes of aggregation of adatoms on island, adatom detachment and the advancement of step. It is shown that ion beam enhanced detachment is capable at the same time to atomize the growing islands, to homogenize the adatom distribution and to maintain the stationary step flow. This makes it possible to obtain a smooth and stationary step flow independently of the timescales set by deposition and diffusion, i.e., independently of the deposition temperature and terrace width.