Abstract
A Al2O3/HfO2 RRAM electro-thermal coupled model was constructed by CMOSOL, which considered the effect of oxygen vacancy. The model includes ion migration, electrical conduction and Joule heating models, and the parameters involved are the same as those of the fabricated devices. The model has include the effect of temperature and oxygen vacancy distribution. In addition, this paper simulates the resistance characteristics of the Reset/Set process, and compares and analyzes the difference between the fracture position and the internal mechanism of the conductive filaments in the laminated structure. The work can help further understand the mechanism of laminated Al2O3/HfO2 RRAM.
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