Modeling Infrared Radiative Properties of Heavily Doped Silicon Complex Gratings With Geometric Modifications

Abstract

Based on the prior work by authors, radiative properties of modified complex gratings with nanoscale features are studied. The purpose of this work is to demonstrate, even preliminary, the possibility of using complex gratings and nanoscale surface features to modify far field radiative properties. A finite-difference time-domain numerical scheme was used to model the infrared radiative properties of heavily doped silicon simple and complex gratings. The solutions were validated with those of rigorous coupled-wave analysis method. By properly choosing the carrier concentration and geometry, silicon complex gratings exhibit a broadband absorptance peak resulting from the excitation of surface plasmon polaritons. Meanwhile, the absorptance of four modified complex gratings with attached features has been numerically investigated for the impacts of the attached structures. Firstly, though absorptance spectra of gratings almost remain unchanged, their locations shift towards longer wavelengths. Secondly, the spectral absorptance peak of two modified complex gratings is wider than that of gratings without attached features due to the cavity resonance excitation. Thirdly, the spectral absorptance of complex gratings with square features in three sizes was compared and shows that the peak wavelength shifts toward longer wavelengths with enlarged feature size.