Abstract
GaN/InGaN heterostructure contains a unique property of piezoelectric polarization charges at the interface due to different thermal expansion coefficients. In this paper, we report a simple mathematical model for Ga-face GaN/InGaN heterostructure solar cell. The results obtained from the given model indicates that the piezoelectric polarization charges at the interface of Ga-face GaN/InGaN heterostructure improves the efficiency of a single GaN/InGaN heterostructure photovoltaic solar cell in comparison to the non-polar solar cells by 45% for AM 1.5. This structure can also provide a fundamental solar cell unit for developing very high efficiency MQW solar cell and a MJ solar cell using Ga-face GaN/InGaN structure.
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