Modeling excitonic line shapes in weakly disordered semiconductor nanostructures

Abstract

Excitonic spectra of weakly disordered semiconductor heterostructures are simulated on the basis of a one-dimensional tight-binding model. The influence of the length scale of weak disorder in quantum wells on the redshift of the excitonic peak and its linewidth is studied. By calculating two-dimensional Fourier-transform spectra we are able to determine the contribution of disorder to inhomogeneous and also to homogeneous broadenings separately. This disorder-induced dephasing is related to a Fano-type coupling and leads to contributions to the homogeneous linewidth that depends on energy within the inhomogeneously broadened line. The model includes heavy- and light-hole excitons and yields smaller inhomogeneous broadening for the light-hole exciton if compared to the heavy-hole exciton, which agrees qualitatively with the experiment.