Abstract

A method for calculating the emissivity of Si wafers with planar and nonplanar (such as rough or textured) surface morphologies is described. The technique is similar to that used in modeling of light trapping in solar cells and is also applicable to those cases when the wafer may have thin dielectric or metal layers. A software package is developed that uses this method. This package includes an approach for calculating the refractive index and absorption coefficient as a function of wavelength, for various temperatures and dopant concentrations. We present results for a number of cases to demonstrate the applications of this model.

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