Modeling electronic conduction in quantum dot constituted assemblies coupled to metallic electrodes

Abstract

It is shown that the electrical transport in quantum dot (QD) constituted films, synthesized through electrochemical doping, could be described through a two-step model considering (i) the tunneling transport of electrons from an electron source, and subsequent (ii) Ohmic transport through the film governed by a temperature (T) dependent mobility (μ), varying as T−α. A transfer matrix algorithm based approach for electrical field induced tunneling and α ∼ 1, was used. The indicated modeling principles could be deployed to predict the current–voltage characteristics of QD films and assemblies coupled to metallic electrodes.