Abstract
A zero-order model is used to estimate the effects associated with focused ion beams. We assume that the energetic ions introduce electronic states at a fixed distance from the surface and at a single energy. Lateral and vertical straggle are ignored. Effects of implant depth and implant dose are investigated and results for carrier depletion at the edge of an implanted sheet and for antidot structures are presented. Some results are for GaAs AlGaAs heterostructures and some are for SiGe heterostructures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
