Abstract
Following the developement of a unified diffusion model valid for all usual dopants in SiGe layers [1], considering the effect of carbone diffusion on point defects concentrations extends the application of our model to strained SiGeC layers. Using a new SIMS methodology, the study of As intrinsic diffusion in SiGe and SiGeC layers is performed, at low concentration and under equilibrium annealing conditions. Arsenic enhanced diffusion in fully-strained SiGe and SiGeC layers on Si substrates was successfully compared to the unified diffusion model.
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