Abstract
A theoretical model for diamond chemical vapor deposition has been developed by combining mass, momentum and energy balance equations for the gas flow with detailed chemical mechanisms for the appropriate gas phase and surface chemistry. The model equations were solved numerically to determine the gas phase composition profile for representative hot filament and d.c. arc jet conditions. The model was then used to investigate the potential benefits of activating the gas phase chemically with chlorine atoms and injecting methane through the substrate. Combining the two modifications may allow growth of a porous diamond film at 1200 μm h−1, using an order of magnititude less energy per carat than a conventional d.c. arc jet reactor.
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