Modeling complexity of a complex gate oxide

Abstract

Hafnium dioxide has been recently introduced as a gate dielectric in the field effect transistors. It belongs to a class of high dielectric constant or high- k dielectrics. We briefly discuss the structural and electronic properties of bulk hafnia, and show how oxygen vacancies believed to affect the band alignment across the metal oxide semiconductor (MOS) stack are stabilized in hafnia films next to high work function metals.