Abstract
Charge transport in a network of only semiconducting single-walled carbon nanotubes is modeled as a random-resistor network of tube-tube junctions. Solving Kirchhoff's current law with a numerical solver and taking into account the one-dimensional density of states of the nanotubes enables the evaluation of carrier density dependent charge transport properties such as network mobility, local power dissipation, and current distribution. The model allows us to simulate and investigate mixed networks that contain semiconducting nanotubes with different diameters, and thus different band gaps and conduction band edge energies. The obtained results are in good agreement with available experimental data.
Highlights
Networks of single-walled carbon nanotubes (SWNTs) exhibit very high charge carrier mobilities [1,2,3,4,5] while being flexible and stretchable [6,7]
Solving Kirchhoff’s current law with a numerical solver and taking into account the one-dimensional density of states of the nanotubes enables the evaluation of carrier density dependent charge transport properties such as network mobility, local power dissipation, and current distribution
While it is possible to remove almost all of the metallic nanotubes from a mixture of SWNTs, the remainder often consists of many different semiconducting chiralities with different diameters and band gaps
Summary
Networks of single-walled carbon nanotubes (SWNTs) exhibit very high charge carrier mobilities [1,2,3,4,5] while being flexible and stretchable [6,7]. A charge carrier density and chirality dependent description of junction resistances and overall mobilities in networks of semiconducting SWNTs is highly desirable. We address these issues, by treating a thin SWNT layer as a random network of one-dimensional sticks in a two-dimensional periodic box, based on models and solutions for disordered systems [41,42], such as organic semiconductors [43,44]. Our main goal is to develop a model that allows us to simulate the charge carrier density dependent transport properties (mobility, local power dissipation, current distribution) of mixed networks of semiconducting SWNTs with different length distributions, energetic disorder and, most importantly, different chiralities and DOS. V, demonstrating the applicability of our approach to realistic mixed networks
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