Modeling and Structural Analysis of Organic Field Effect Transistor

Abstract

This paper proposes an analytical model for bottom gate structures of Organic Field Effect Transistors (OFETs). Structural analysis and significant advantages of top contact over bottom contact devices are demonstrated by 2-D numerical device simulation. Top contact devices observe relatively small contact resistance as compared to bottom contact one due to larger injection area. It results in higher mobility which enables these devices suitable for fast operation. The extracted mobility value for top contact is higher than bottom contact devices. Further this paper presents an analytical model for both structures on the basis of contact resistance. A current voltage model is derived for linear and saturation regions. The current voltage (I-V) characteristics of analytical model are compared with simulation results. Both results are comparable to each other that validates proposed analytical model.