Abstract
A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The improved device characteristics by incorporating carbon atoms in SiGe-channel is simulated and analyzed. Compared with SiGe-channel UMOSFET, the structure has not only lower on-state resistance but also better thermal stability. The dependence of device characteristics on the critical thickness of SiGeC-channel is also studied. The simulated results show that the critical thickness is reduced largely because of adding carbon atoms to SiGe-channel. It indicates that SiGeC alloy is a promising channel material for power trench MOSFET application.
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