Abstract
In this paper, we have carried out numerical analysis (modeling and simulation) on current (I)-voltage (V) characteristics of both pristine P3HT and P3HT: PCBM blend both under equilibrium and non-equilibrium conditions. Non-equilibrium condition in the materials is assumed to be associated with mutually exclusive deviation of photosensitive device parameters from equilibrium values due to light illumination. Current in both pristine P3HT and P3HT: PCBM blend are observed to increase with increase in electron mobility, hole mobility and carrier density within the material. Photosensitivity for both the materials is larger at negative voltage since enhanced exciton generation and dissociation takes place at P3HT grain boundaries and P3HT/PCBM interface of pristine P3HT and P3HT/PCBM blend, respectively. Finally, DC photoresponse for our simulated OPD device structure ITO/P3HT/P3HT:PCBM/Au (Device A) is observed to be faster than the OPD structure of ITO/ P3HT:PCBM/Au (Device B) indicating enhanced carrier injection and transport aided by the extra hole transport layer of P3HT in Device A.
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