Modeling and Simulation of Optically Gated TFET for Near Infra-Red Sensing Applications and Its Low Frequency Noise Analysis

Abstract

In this paper, optically gated Tunnel Field Effect Transistor (TFET), operating on the principle of band-to-band tunneling, is designed for sensing closely spaced spectral wavelengths (~100nm) in the near-infrared region of spectrum (1– $0.7~\mu \text{m}$ ) at low intensity of illumination ( $\! /cm2). A photogenerated voltage, gate charge and semi-conductor charge models have been respectively developed to illustrate device operation. A higher illumination current, lower threshold voltage, steeper sub-threshold swing (SS) and higher ION/IOFF of the proposed device, under the incident radiation, makes it compatible for low power operation with optimum performance. This device achieved a high sensitivity of 26.52 by utilizing the advantages of TFETs. On being exposed to different concentrations of uniform and Gaussian interface traps, the performance comparison is observed in terms of ION, IOFF and SS. Gaussian trap is more susceptible to device performance degradation. Further, the low both the cases, the $\text{S}_{ID}$ is in the range of 10−18 to 10−16 A2/Hz for all the considered trap concentrations which is comparatively low. Finally, the comparison of $\text{S}_{ID}$ of the proposed device with the published works is done.