Abstract
Computer simulations were done extensively in order to study nonlinear dynamics of laser and non-equilibrium electron-hole plasma interaction in deep submicron n-MOSFET silicon devices. We constructed the modified Duffing kind of nonlinear electron-hole plasma oscillator equation. Nonlinear characteristics of electron-hole plasma by impact ionization in submicron devices manifest a wide diversity of complex chaotic behavior. Collision frequency is found to be the dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of electron-hole plasma at deep submicron devices. Small windows of higher period cascade above the critical value of laser parameter (α1α2) in the chaos region are observed. Non-equilibrium electron-hole plasma shows much chaotic regime at lower value of laser frequency (δ). Hysteresis and bistable region of electron-hole plasma are also presented and the conditions for their occurrence are identified. The unstable region completely merge at higher value of effective collision frequency (γ).
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