Modeling and Simulation of Nanoscale Lateral Gaussian Doped Channel Asymmetric Double Gate MOSFET

Abstract

This work presents the drain current model using Evanescent Mode Analysis (EMA) for nanoscale Double Gate MOSFET having Gaussian doping profile along the horizontal direction in the channel i.e. from source to drain region. Due to heavily doped channel, band gap narrowing effect is incorporated in the analytical modeling scheme. The various parameters evaluated in this work using analytical modeling scheme are surface potential, electric field, threshold voltage, sub-threshold slope and drain current. The impact of peak Gaussian doping profile on the drain current and trans-conductance has been demonstrated which are important for assessing the analog performance of the device. The results are also compared with the uniformly doped DG MOSFET. The asymmetric behaviour of Gaussian doped DG MOSFET has also been investigated. In addition to this, digital performance of Gaussian doped DG MOSFET has also been assessed using exhaustive device simulation.