Abstract
Laterally Diffused MOSFET (LDMOS) are widely used in modern communication industry and other applications. LDMOS offers various advantages over conventional MOSFETs with little process change. In the present paper, an LDMOS device is modeled and simulated in SILVACO device simulator package using the ATHENA and ATLAS modules. The complete fabrication process is modeled and the device performance is simulated. The modeled device gives a 46 V breakdown voltage for a device gate length of 5µm. The device threshold voltage is 0.97V. The device characteristic are also simulated and presented. Index Terms—LDMOS, SILVACO, ATHENA, ATLAS I. INTRODUCTION paradigm shift from thick and rigid electronic chips to flexible ultra thin chips has resulted in an entire new realm of electronic applications. 3D ICs, flexible circuits, RFIDs are a few of the numerous applications. The flexible circuits require mechanically rugged flexible substrates, ultra thin substrates and low cost production. Handling of ultra-thin chips is a major issue in flexible electronics circuits. The conventional methods of backside CMP are not efficient beyond 50µm thickness. Chipfilm
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