Abstract
In this work, 2D physical modeling and simulation of gallium oxide based thin film solar blind UV photodetector device using COMSOL multiphysics software is carried out. Doping profile, energy level diagram, responsivity and spontaneous emission analysis of the gallium oxide based thin film solar blind UV photodetector are analysed and reported. The p-i-n doped thin film Ga2O3 photodetector device with 5 μm width, 1 μm height exhibits a responsivity of 1.1 × 10−3 A/W, external quantum efficiency (EQE) of 70% at 2 V reverse voltage bias and the total emitted power of 7.41 × 1021 m−3s−1 at 4.9 eV photon energy. Metal contact analyses have been carried out using various elements, and Schottky contacts are established with gold, nickel and platinum metal contacts.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
