Abstract
In this work, 2D physical modeling and simulation of gallium oxide based thin film solar blind UV photodetector device using COMSOL multiphysics software is carried out. Doping profile, energy level diagram, responsivity and spontaneous emission analysis of the gallium oxide based thin film solar blind UV photodetector are analysed and reported. The p-i-n doped thin film Ga2O3 photodetector device with 5 μm width, 1 μm height exhibits a responsivity of 1.1 × 10−3 A/W, external quantum efficiency (EQE) of 70% at 2 V reverse voltage bias and the total emitted power of 7.41 × 1021 m−3s−1 at 4.9 eV photon energy. Metal contact analyses have been carried out using various elements, and Schottky contacts are established with gold, nickel and platinum metal contacts.
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