Abstract
In this paper, we present the modeling and simulation of As-doped-Si low-pressure chemical vapor deposition (LPCVD), in which a Si film growth step using SiH4 and an AsH3 adsorption step are alternately performed (sequential doping is carried out). We focus on the Si film growth in the second step of sequential doping, which involves Si film growth (first step) → AsH3 adsorption → Si film growth (second step). The growth thickness and As concentration in the Si film are evaluated with respect to deposition time. As atoms adsorbed on the Si surface after the AsH3 adsorption step are taken up by the Si layer grown in the second step, and some of these atoms precipitate on the Si film surface. The adsorption of SiH4 is suppressed owing to the effect of the As atoms precipitated on the Si film surface, resulting in a decrease in the growth rate of the Si film. On the basis of this finding, we construct a surface reaction model by determining the sticking coefficient of SiH4 from the growth plots in the second step. The Si film growth profiles on submicron holes are analyzed by topography simulation using the surface reaction model, and simulation results are compared with experimentally obtained results.
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