Abstract
An analytical modeling framework is presented for the two-dimensional electron gas (2DEG) density and bare surface barrier height in AlGaN/InGaN/GaN double heterostructures, which use an InGaN layer as the conducting channel. The 2DEG formed at the AlGaN/InGaN heterointerface originates from the surface donor states on the AlGaN surface. The model is derived by the electrostatic analysis of different material interfaces. Numerical simulations are performed to determine the effect of a thick channel (InGaN layer). The presented results agree with the published experimental results, and they can easily be used for the advanced design and characterization of AlGaN/InGaN/GaN-based heterostructures.
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