Abstract
Slurry plays an important role in the material removal of chemical mechanical polishing (CMP). However, the behavior of abrasive particles of the slurry in the interface between the wafer and the pad during CMP is not fully understood. In this paper, a new computational fluid dynamic (CFD) model was developed. It was a combination of multiphase and discrete phase modeling. The abrasive particles behavior and the slurry distribution in the interface were simulated using this model. The total numbers of particles in the gap were quantified to characterize their mechanical effects under different operating parameters. The simulation results showed that when the gap thickness increased and speeds of the wafer and the pad decreased, the total number of particles in the gap increased. It also found that the particles were non-uniformly distributed below the wafer. The results have the capacity of providing a deeper insight understanding of the material removal of the CMP mechanism.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: The International Journal of Advanced Manufacturing Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.