Abstract

For a quick and consistent photovoltaic (PV) module design, an effective, fast, and exact simulator is crucial to examine the performance of the photovoltaic cell under partial or quick variation of temperature and irradiance. The most prevalent modeling strategy is to apply an equivalent (electrical) circuit that encompasses together non-linear and linear mechanisms. This work proposes the modeling and analysis for a four-parameter two-diode photovoltaic cell model based on the manufacturer's data-sheet. The proposed model needs only four parameters compared to the previously developed seven-parameter two-diode model to reduce the computational complexity. To develop a specific model of photovoltaic cells, the fundamental requirement is the data of temperature and irradiance. The variation of these variables totally affects the output constraints like current, voltage, and power. Thus, it is substantial to design a precise model of the photovoltaic cell module with a reduced computation period. The two-diode photovoltaic module with four constraints is identified to be more accurate and have improved performance compared to a one-diode model particularly at lower irradiance. To confirm the accuracy of the proposed model the method is applied on two different photovoltaic modules. The proposed model and modeling method are helpful for power electronic designers who require a fast, accurate, simple, and easy to implement method for use in photovoltaic system simulation. The electrical equivalent circuit and standard equations of photovoltaic cells are analyzed and the proposed two-diode model is simulated using MATLAB/Simulink software and validated for poly-crystalline and mono-crystalline solar cells under standard test conditions.

Highlights

  • In recent years, several models have been developed including the single-diode RS model, RP model, and double-diode and triple-diode model [1,2,3]

  • Where Pmpp is the peak or maximum power, Voltage at Pmpp (Vmpp),standard test condition (STC) is the voltage at Pmpp, and Impp,STC is the current at Pmpp, diode saturation currents at the maximum power condition is given by the relation as shown below: Vmpp,STC + Impp,STC RSE

  • We can observe that the calculated values slightly deviate from the manufacturer data sheet value at STC

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Summary

INTRODUCTION

Several models have been developed including the single-diode RS model, RP model, and double-diode and triple-diode model [1,2,3]. By setting the values of ideality factors C1 = 1 and C2 = 1.2 yields the best suitable outcomes in the current-voltage curve of the PV cell module These alterations make the two-diode model into its simplified form and attractive for PV system simulation. Maximum power (Pmpp) Voltage at Pmpp (Vmpp) Current at Pmpp (Impp) Voltage at open circuit (Vo) Current at short circuit (ISC) Light current (IL) Saturation currents (IDS1 = IDS2) Series resistance (RSE ) Shunt resistance (RSH). Maximum power (Pmpp) Voltage at Pmpp (Vmpp) Current at Pmpp (Impp) Voltage at open circuit (Vo) Current at short circuit (ISC) Light current (IL) Saturation currents (IDS1 = IDS2) Diode ideality factor (C) Series resistance (RSE ) Shunt resistance (RSH). Where Pmpp is the peak or maximum power, Vmpp,STC is the voltage at Pmpp, and Impp,STC is the current at Pmpp, diode saturation currents at the maximum power condition is given by the relation as shown below: Vmpp,STC + Impp,STC RSE

VT NSE
SIMULATION RESULTS AND DISCUSSION
CONCLUSION
DATA AVAILABILITY STATEMENT
Full Text
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