Abstract
Based on a newly proposed edge termination technique on silicon carbide (SiC) device named aperture density modulation (ADM), this article investigates the optimization strategy of a family of termination structures derived from it. Using both analytical modeling and numerical simulation, this article demonstrates the capability of achieving 15-kV breakdown voltage with a termination length of 160–240 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> in theory. Besides, the fabrication feasibility with profile customizability is also demonstrated in experiments while still keeping a low process cost.
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