Modeling and implementation of spin diode based on two dimensional materials using Monte Carlo sampling method

Abstract

PurposeA “spin-diode” is the spintronics equivalent of an electrical diode: applying an external magnetic field greater than the limit of spin-diode BT flips the spin-diode between an isolating state and a conducting state [1]. While conventional electrical diodes are two-terminal devices with electrical current between the two terminals modulated by an electrical field, these two-terminal magneto resistive devices can generally be referred to as “spin-diodes” in which a magnetic field modulates the electrical current between the two terminals.Design/methodology/approachCurrent modulation and rectification are an important subject of electronics as well as spintronics spin diode is two-terminal magnetoresistive devices in which change in resistance in response to an applied magnetic field; this magnetoresistance occurs due to a variety of phenomena and with varying magnitudes and directions.FindingsIn this paper, an efficient rectifying spin diode is introduced. The resulting spin diode is formed from graphene gallium and indium quantum dots and antimony-doped molybdenum disulfide. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. The non-equilibrium density functional theory with a Monte Carlo sampling method is used to evaluate the flow of electrons and rectification ratio of the system.Originality/valueThe results indicate that spin diode displaying both spin-current and charge-current rectification should be possible and may find practical application in nanoscale devices that combine logic and memory functions.