Abstract

A novel non-isothermal glass hot embossing system utilizes a silicon mold core coated with a three-dimensional carbide-bonded graphene (CBG) coating, which acts as a thin-film resistance heater. The temperature of the system significantly influences the electrical conductivity properties of silicon with a CBG coating. Through simulations and experiments, it has been established that the electrical conductivity of silicon with a CBG coating gradually increases at lower temperatures and rapidly rises as the temperature further increases. The CBG coating predominantly affects electrical conductivity until 400 °C, after which silicon becomes the dominant factor. Furthermore, the dimensions of CBG-coated silicon and the reduction of CBG coating also affect the rate and outcome of conductivity changes. These findings provide valuable insights for detecting CBG-coated silicon during the embossing process, improving efficiency, and predicting the mold core's service life, thus enhancing the accuracy of optical lens production.

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