Abstract
A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.
Highlights
Graphene, which is one of the most promising two-dimensional (2D) materials, is composed of carbon atoms arranged in a hexagonal lattice [1]
Perovskite solar cells in which the electron collection layers are implemented through especially synthetized graphene/TiO2 nanocomposites have been demonstrated [20], while graphene quantum dots have been used as active layer in a solar cell [21]
We report on the design of a new flexible solar cell based on a Schottky junction consisting of of an an ultrathin ultrathin layer layer of of graphene graphene oxide oxide (GO)
Summary
Graphene, which is one of the most promising two-dimensional (2D) materials, is composed of carbon atoms arranged in a hexagonal lattice [1]. By transferring a graphene sheet on a semiconducting substrate of Si or GaAs, a Shottky junction acting as a solar cell under illumination can be manufactured via simple fabrication processes. Has been expensive graphene/GaAs Shottky junction solar cell with an efficiency of >18% has been reported reported [24]. 2 layer can be on the n-Si immediately before the graphene transfer by exposing the wafer clean at room grown on the n-Si immediately before the graphene transfer by exposing the to wafer toroom clean air room air at temperature and controlled humidity (average humidity = 42%) In this way, the thickness of the SiO2 layer slowly increases as the exposure time increases [32].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
