Abstract
In this work, we developed a model for a nonvolatile memory cell based on the electrical model for a TiOX/HfOx ReRAM cell and the hybrid electrothermal model of a VO2 Mott selector developed recently by our team. Both models have been calibrated and validated with experimental data, and the operating characteristics of a one-selector-one-ReRAM (1S1R) memory cell has been studied. The length of the selector layer was varied as a design parameter to meet the design requirements for proper read, write, and erase operations. Simulation results suggest that the modified selector cell with 60 nm length of the VO2 layer meets all the requirements for proper operation, with a cell write voltage of 1.6 V and erase voltage of 2.5 V. The access time for this structure was studied by benchmarking with experimental data. Write access time of 10.5 ns and erase access time of 16 ns have been obtained from simulations.
Highlights
Resistive random access memory (ReRAM) is a competitive candidate for the next-generation of non-volatile memories due to its excellent scalability, fast switching speed, simple device fabrication, and two-terminal structure
We developed a model for a non-volatile memory cell, based on the electrical model for TiOX/HfOx ReRAM cell and the hybrid electro-thermal model of VO2 Mott selector developed recently by our team
We studied the design of 1S1R memory cells based on the VO2 Mott selector and TiOX/HfOX ReRAM element
Summary
Resistive random access memory (ReRAM) is a competitive candidate for the next-generation of non-volatile memories due to its excellent scalability, fast switching speed, simple device fabrication, and two-terminal structure This device has the potential to be used in 3D-stacked memories [1]-[5]. Various types of selector devices have been proposed, including diodes (1D1R), CMOS transistors (1T1R) [11], BJT transistors (1BJT1R), or even a second ReRAM cell [12] Among those methods, the 1T1R and 1BJT1R have complex fabrication process [13] and require three-terminal device which is not fully compatible with crossbar structure. For Mott selector modeling, there are two main mechanisms proposed in the literature to explain the IMT: (I) Structural changes induced by Joule heating (thermal) [23] and (II) Field assisted carrier generation (electrical) [24]. The main advantage of the proposed model is that it can estimate the device characteristics from pure thermal transition to pure electrical transition as the design parameter varies, which is crucial feature for a design oriented model
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