Abstract
Mobility enhancement unique to AlGaN/GaN MOSHFETs was characterized under CW and pulse conditions and at different temperatures. The physical insight obtained was used to guide the modification of the Angelov model to account for threshold shift with temperature and capacitance peaking near pinch off. This modified Angelov model can accurately simulate the power, gain, efficiency, drain current, and gate current of a Class-A amplifier over a wide range of input power and ambient temperature.
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