Abstract

AbstractBecause of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response.

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